PART |
Description |
Maker |
MF1302T-1R8 MF1501T-1R5 MF1304T-6R8 MF1303T-100 MF |
Axial Molded Choke 0.5-2.5 GHz Ultralinear Mixer w/LO Buffer 8.5 - 11 GHz 6-bit Phase Shifter Low Noise Amp, SB Gain Block X-band Discrete Power pHEMT Ku-band Discrete Power pHEMT 18mm HFET 24mm HFET Cell-Band CDMA PA Module; 1-Bit Cell-Band PA Module; 1-Bit
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ECM Electronics Limited.
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TGF2021-04 |
DC - 12 GHz Discrete power pHEMT 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
TriQuint Semiconductor, Inc. TRIQUINT SEMICONDUCTOR INC
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UPB1502GR UPB1502GR1 UPB1502GR1-E1 UPB1502GR-E1 |
1.7 GHz/ 2.0 GHz LOW-POWER TWO-MODULUS PRESCALER DIVIDED-BY-64/65, 128/129 1.7千兆 2.0 GHz的低功耗双分频DIVIDED-BY-64/65,一百二十九分之一百二十八 1.7 GHz/ 2.0 GHz Low-Power Two-Modulus Prescaler(1.7GHz 2.0GHz 定标
|
NEC, Corp. NEC Corp.
|
VSMP1206 |
Z-Based Bulk Metal Foil Technology Discrete High Precision Surface Mount Chip Resistor High Power - Excellent Long Term Stabilty Z -基大块金属箔技术离散高精度表面贴装芯片电阻,高功率-卓越的长期稳 Resistors, fixed discrete
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
|
OM5236ST OM5241ST OM5240ST OM5238ST OM5237ST OM523 |
400V 10A Hi-Rel Ultra-Fast Discrete Diode in a TO-257AA package 400V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package 150V 10A Hi-Rel Ultra-Fast Discrete Diode in a TO-257AA package 150V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package 100V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package SINGLE ISOLATED RECTIFIER IN HERMETIC 200V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
International Rectifier List of Unclassifed Manufacturers ETC[ETC]
|
2SJ327 2SJ327-Z 2SJ327-Z-T1 2SJ327-Z-E2 2SJ327-Z-T |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0620-4 00; No. of Positions: 6; Connector Type: Panel SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE P-channel enhancement type
|
NEC Corp. NEC[NEC]
|
BFY193 |
HIREL NPN SILICON RF TRANSISTOR (HIREL DISCRETE AND MICROWAVE SEMICONDUCTOR FOR LOW NOISE, HIGH GAIN BROADBAND AMPLIFIERS UP TO 2 GHZ.) From old datasheet system
|
Siemens Semiconductor Group Infineon
|
87310B 87300C 87300D 87301B 87300B 87301D 87301C 8 |
87310B Coaxial Hybrid Coupler, 90 Degree, 1 GHz to 18 GHz 87300C Coaxial Directional Coupler, 1 GHz to 26.5 GHz 87300D Coaxial Directional Coupler, 6 to 26.5 GHz 87301B Coaxial Directional Coupler, 10 to 46 GHz 87300B Coaxial Directional Coupler, 1 GHz to 20 GHz 87301D Coaxial Directional Coupler, 1 GHz to 40 GHz 87301C Coaxial Directional Coupler, 10 to 50 GHz 87301E Coaxial Directional Coupler, 2 GHz to 50 GHz
|
Agilent (Hewlett-Packard)
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RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大 Single-band power amplifiers The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
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ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
|
RMWP23001 |
23 GHz Power Amp 21-24 GHz Power Amplifier MMIC
|
FAIRCHILD[Fairchild Semiconductor]
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